Optoelectronic arrangement and method for producing an optoelectronic arrangement

ABSTRACT

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Application No. 17/072,899filed Oct. 16, 2020, now allowed, which is a continuation of U.S. PatentNo. 10,854,783 B2, issued Dec. 1, 2020, which claims priority to PCTapplication PCT/EP2016/066170 filed on Jul. 7, 2016, which claimspriority to foreign application (DE) 10 2015 111 574.3 filed Jul. 16,2015, the disclosures of which are hereby incorporated by reference intheir entireties.

One object to be achieved consists in specifying an optoelectronicarrangement that can be produced in a simplified manner. A furtherobject to be achieved consists in specifying a simplified method forproducing an optoelectronic arrangement.

An optoelectronic arrangement is specified. The optoelectronicarrangement can be provided for emitting and/or for absorbing anelectromagnetic radiation. The optoelectronic arrangement can be a lightemitting diode arrangement, such as a display, for example, and/or aphotodiode arrangement.

In accordance with at least one embodiment, the optoelectronicarrangement comprises a moulded body having a top surface and a bottomsurface facing away from the top surface. The moulded body is embodiedas a carrier of the optoelectronic arrangement. The moulded body can beformed with a plastics material and/or a, more particularly synthetic,resin or consist of one of these materials. In particular, the mouldedbody is not a growth substrate of the optoelectronic arrangement. Themoulded body can be embodied in an electrically insulating fashion.Furthermore, the moulded body can be embodied in an integral fashion,that is to say in a continuous fashion. By way of example, the mouldedbody is a potting component. Furthermore, the moulded body can beembodied in a layerlike fashion, for instance as a conformallyovermoulding, preferably electrically insulating, layer.

The moulded body has a main extension plane in which it extends inlateral directions. The top surface and the bottom surface of themoulded body respectively form a principal plane of the moulded body.Perpendicular to the main extension plane, in a vertical direction, themoulded body has a thickness. The thickness of the moulded body is smallin comparison with the maximum extension of the moulded body in thelateral directions. By way of example, the thickness of the moulded bodyis at least 80 µm and at most 120 µm. Alternatively, it is possible forthe thickness of the moulded body to be at least 1 µm and at most 10 µm,preferably at most 8 µm.

In accordance with at least one embodiment, the optoelectronicarrangement comprises a first pixel group. A multiplicity of pixels areassigned to the first pixel group. In other words, the first pixel groupcomprises a multiplicity of pixels. Each of the pixels of the firstpixel group has a first semiconductor region, a second semiconductorregion and an active region. The active region emits and/or absorbs theelectromagnetic radiation during the operation of the arrangement. Thefirst semiconductor region, the second semiconductor region and theactive region can in each case be formed with a (compound) semiconductormaterial or consist thereof. By way of example, the first semiconductorregion, the second semiconductor region and the active region are basedin each case on GaN. The pixels can be individual segments of thearrangement. The pixels can have in the lateral directions in each casea maximum extent of at least 30 µm and at most 300 µm, preferably atmost 100 µm and particularly preferably at most 50 µm.

Here and hereinafter a “pixel group” can be a set of pixels which aregrouped on the basis of common properties. The common properties are forexample a common electrical contacting of the first semiconductorregions and/or of the second semiconductor regions of the pixels of apixel group. The first semiconductor regions and/or the secondsemiconductor regions of the pixels of a pixel group can then be at acommon electrical potential. Alternatively or additionally, the commonproperties can be provided by a common spatial arrangement of the pixelsof a pixel group, such as, for example, an arrangement in a common rowor a common column of a matrix.

In accordance with at least one embodiment, the optoelectronicarrangement comprises a multiplicity of separating structures. Theseparating structures are arranged between the pixels. The separatingstructures can serve for spatially separating at least portions of thepixels. Furthermore, the pixels can be optically decoupled from oneanother by means of the separating structures.

In accordance with at least one embodiment, the optoelectronicarrangement comprises at least one first contact structure. The at leastone first contact structure comprises a first contact plane and a firstcontact location. The first contact location is freely accessible at thebottom surface. In particular, the first contact location iselectrically contactable externally at the bottom surface. The firstcontact structure can be embodied in an electrically conductive fashion.In particular the first contact plane and the first contact location canbe formed with at least one metal or consist thereof. All components ofthe first contact structure can be at a common electrical potential. Inother words, the first contact plane, the first contact location and ifappropriate further components of the first contact structure areelectrically conductively connected to one another.

In accordance with at least one embodiment of the optoelectronicarrangement, the pixels are arranged at the top surface alongside oneanother. Here and hereinafter, “arranged at the top surface” can meanthat the pixels are arranged in a common plane running parallel to thetop surface within the scope of the production tolerances. Furthercomponents of the arrangement, such as, for example, the first contactplane and/or an insulation layer, can then be arranged between thepixels and the moulded body. Alternatively or additionally, the pixelscan directly adjoin the top surface at least in some locations.

Each of the pixels can have a radiation passage surface facing away fromthe moulded body. The electromagnetic radiation emitted and/or absorbedby the active region passes through the radiation passage surface of thepixel. The radiation passage surfaces can form for example a commonluminous surface of the arrangement that is segmented on account of theradiation passage surfaces of the pixels separated by means of theseparating structures.

The pixels can furthermore be arranged laterally at a distance from oneanother. By way of example, a lateral distance between two adjacentpixels is at least 1 µm and at most 20 µm, preferably at most 7 µm, andparticularly preferably at most 5 µm. Here and hereinafter, the lateraldistance is the minimum distance between two outer surfaces of thepixels in one of the lateral directions. Furthermore, here andhereinafter, pixels can be “adjacent” if they are arranged directlyalongside one another in the lateral directions. In each case at leastone of the separating structures can be arranged between two pixels. Byway of example, the pixels are arranged in a matrixlike fashion, that isto say in rows and columns, at the top surface.

In accordance with at least one embodiment of the optoelectronicarrangement, the first semiconductor regions and/or the secondsemiconductor regions of adjacent pixels are electrically insulated fromone another by means of the separating structures. For this purpose, theseparating structures can comprise an electrically insulating material.The electrically insulating material can be a passivation layer, forexample, which can be formed with an oxide and/or a nitride, a plasticor a gas, such as, for example, an ambient atmosphere in an apparatus inwhich the arrangement is produced. Furthermore, the first semiconductorregions and/or the second semiconductor regions of adjacent pixels canbe spatially separated from one another by means of the separatingstructures.

In accordance with at least one embodiment of the optoelectronicarrangement, a first contact structure is assigned one-to-one to thefirst pixel group. In particular, it is possible for a first contactlocation to be assigned one-to-one to the first pixel group.

In accordance with at least one embodiment, the pixels of the firstpixel group are electrically conductively connected to one another bymeans of the first contact plane, in particular the first contact planeof the first contact structure assigned one-to-one to said first pixelgroup. The first contact plane can be at least regionally in directcontact with the first semiconductor regions of the pixels of the firstpixel group. It is possible for the first semiconductor regions to beelectrically conductively connected to one another exclusively by meansof the first contact plane.

In accordance with at least one embodiment of the optoelectronicarrangement, the first semiconductor regions of the pixels of the firstpixel group are electrically conductively contactable by means of thefirst contact location, in particular the first contact location of thefirst contact structure assigned one-to-one to said first pixel group.For this purpose, the first contact location can be electricallyconductively connected to the first contact plane. By way of example,the arrangement is a surface mountable device (SMD). An electricalcontacting of the first contact location can then be carried out bymeans of a soldering connection.

In accordance with at least one embodiment, the optoelectronicarrangement comprises a moulded body embodied as a carrier and having atop surface and a bottom surface facing away from the top surface, afirst pixel group, a multiplicity of separating structures and a firstcontact structure. The first pixel group has a multiplicity of pixels,each comprising a first semiconductor region, a second semiconductorregion and an active region that emits and/or absorbs electromagneticradiation during the operation of the arrangement. The multiplicity ofseparating structures are arranged between the pixels. The first contactstructure has a first contact plane and a first contact location that isfreely accessible at the bottom surface. The pixels are arranged at thetop surface alongside one another. The first semiconductor regionsand/or the second semiconductor regions of the adjacent pixels areelectrically insulated from one another by means of the separatingstructures. A first contact structure is assigned one-to-one to thefirst pixel group. Furthermore, the first semiconductor regions of thepixels of the first pixel group are electrically conductively connectedto one another by means of the first contact plane and are electricallycontactable by means of the first contact location.

In accordance with at least one embodiment of the optoelectronicarrangement, the first contact location comprises the sole contactlocation of the at least one first contact structure that is freelyaccessible at the bottom surface of the moulded body. In other words,the first contact structure has a single first contact location. Inparticular, it is possible for the first semiconductor regions of thepixels of the first pixel group to be electrically contactableexternally exclusively by means of the first contact location.

In accordance with at least one embodiment of the optoelectronicarrangement, the moulded body is embodied as a mechanically stabilizingcomponent of the arrangement. Here and hereinafter, “mechanicallystabilizing” means that the mechanical handling of the optoelectronicarrangement is improved by means of the moulded body and as a result,for example, a higher external force can act on the optoelectronicarrangement, without the latter being destroyed. In particular, theoptoelectronic arrangement can become mechanically self-supporting bymeans of the moulded body, that is to say that the optoelectronicarrangement can be handled for instance in the context of amanufacturing method with tools such as tweezers, for example, without afurther supporting element having to be present.

The use of a moulded body as a mechanically stabilizing element enablesin particular the simplified production of the optoelectronicarrangement. Furthermore, the moulded body guarantees a high mechanicalstability.

It is furthermore possible for a conversion material for the wavelengthconversion of the electromagnetic radiation emitted and/or absorbed bythe active regions to be applied on at least one of the radiationpassage surfaces, preferably on at least 50% of the radiation passagesurfaces, and particularly preferably on all of the radiation passagesurfaces. By way of example, the conversion material can be applied tothe radiation passage surfaces as potting. The potting can be formedwith a silicone or an epoxy resin into which wavelength-convertingparticles, such as, for example, phosphor particles or quantum dots areintroduced. Alternatively, the conversion material can be present as aconverter lamina, in particular as a ceramic converter lamina. Inparticular, it is possible for a single converter lamina to be appliedon at least 50% of the radiation passage surfaces. The converter laminacan then likewise have a mechanically stabilizing effect. By way ofexample, the converter lamina can be produced by means ofelectrophoresis. Moreover, the conversion material can be applied to theradiation passage surfaces as a layer, for example by means of spraycoating.

In accordance with at least one embodiment of the optoelectronicarrangement, the moulded body is formed with at least one of thefollowing materials or consists of one of the following materials: epoxyresin, silicone resin. These materials can be applied in particular bymeans of a compression moulding method, an injection moulding methodand/or a transfer moulding method.

In accordance with at least one embodiment of the optoelectronicarrangement, the separating structures are formed by trenches that arefree of the material of the pixels. The first semiconductor regions, theactive regions and/or the second semiconductor regions of adjacentpixels are spatially separated from one another by the trenches. Inparticular, the first semiconductor regions, the active regions and/orthe second semiconductor regions are not connected to one another by asemiconductor material. The trenches can be etching trenches, forexample, which have been introduced into a semiconductor layer sequencefrom which the first semiconductor regions, the active regions and/orthe second semiconductor regions can emerge during a production method.

In accordance with at least one embodiment of the optoelectronicarrangement, the moulded body extends into the trenches. In other words,the moulded body is arranged at least in some locations between thepixels. In particular the trenches can be completely filled with themoulded body. By means of the moulded body introduced into the trenches,an anchoring of the moulded body to the pixels can be carried out.Furthermore, the mechanical stability of the arrangement canadditionally be increased by the introduction of the moulded body intothe trenches.

The moulded body can be embodied in a radiation-nontransmissive fashion.An optical isolation of the pixels can then be carried out for exampleby means of the moulded body introduced into the trenches.

Furthermore, it is possible for the moulded body to be embodied in aradiation-reflecting fashion. By way of example, for this purpose,radiation-reflecting particles can be embedded into the moulded body.Here and hereinafter, a component of the arrangement is“radiation-nontransmissive” if it has a transmission factor of at most40%, preferably at most 20% and particularly preferably at most 10% forthe electromagnetic radiation emitted and/or absorbed by the activeregions. Furthermore, here and hereafter, a component of the arrangementis “radiation-reflecting” if it has a reflectance of at least 60%,preferably at least 80%, and particularly preferably at least 90%, forthe electromagnetic radiation.

In accordance with at least one embodiment of the optoelectronicarrangement, the first semiconductor regions and the active regions ofadjacent pixels are spatially completely separated from one another. Inother words, the first semiconductor regions and the active regions ofadjacent pixels are not connected to one another by a semiconductormaterial. Furthermore, the second semiconductor regions of adjacentpixels are connected to one another via intermediate regions. Theintermediate regions are formed with the material of the secondsemiconductor regions. The second semiconductor regions of the pixelscan thus be embodied in a continuous and integral fashion. In this case,it is possible for the intermediate regions to have a smaller extent inthe vertical direction than the second semiconductor regions.

In accordance with at least one embodiment of the optoelectronicarrangement, a space between the pixels is at least regionally free of asemiconductor material. In particular, the space between the pixels canbe completely free of a semiconductor material. In other words, it ispossible for the first semiconductor regions, the active regions and thesecond regions of the pixels not to be connected to one another by asemiconductor material. The space between the pixels can be theseparating structures formed by the trenches.

In accordance with at least one embodiment of the optoelectronicarrangement, a multiplicity of first pixel groups are present. A firstcontact structure is assigned one-to-one to each of the first pixelgroups. The pixels of each of the first pixel groups can be electricallyconductively connected to one another by means of the first contactplane assigned one-to-one to the respective first pixel group.Furthermore, the pixels of each of the first pixel groups can beelectrically contactable electrically conductively with the firstcontact location assigned, in particular one-to-one, to the respectivefirst pixel group.

In accordance with at least one embodiment, the optoelectronicarrangement comprises a multiplicity of second pixel groups.Furthermore, the arrangement comprises at least one second contactstructure having at least one second contact plane and a second contactlocation. The second contact location can be the sole contact locationof the second contact structure that is freely accessible at the bottomsurface. The second contact location is freely accessible at the bottomsurface. In other words, the second contact location is electricallycontactable at the bottom surface. The second contact structure cancomprise the same materials or be formed from the same materials as thefirst contact structure.

In accordance with at least one embodiment of the optoelectronicarrangement, at least one pixel of each of the first pixel groups isuniquely assigned to each second pixel group. Conversely, it is possiblefor a first pixel group to be uniquely assigned to each pixel of thesecond pixel group. In other words, a single first pixel group and asingle second pixel group are assigned to each pixel of theoptoelectronic arrangement. By way of example, the pixels are arrangedin a matrixlike fashion at the top surface, wherein the pixels of thematrix that are arranged in a row are respectively assigned to one ofthe first pixel groups, while the pixels of the matrix that are arrangedin a column are respectively assigned to one of the second pixel groups.

Furthermore, a second contact structure is assigned one-to-one to eachsecond pixel group. The second semiconductor regions of the pixels ofthe second pixel group are electrically conductively connected to oneanother by means of the second contact plane and electricallycontactable by means of the second contact location. In particular, thepixels of the second pixel group are electrically contactable with thesecond contact location of the second contact location assigned to saidsecond pixel group. For this purpose, the second contact location canhave the same construction as the first contact location.

In accordance with at least one embodiment of the optoelectronicarrangement, the at least one first contact structure has at least onefirst plated-through hole which extends in a vertical directioncompletely through the moulded body. Alternatively or additionally, thesecond contact structure present, if appropriate, can have at least onesecond plated-through hole which extends in a vertical directioncompletely through the moulded body. The first plated-through holeand/or the second plated-through hole, if appropriate, can have the sameextent as the moulded body in the vertical direction. The firstplated-through hole and/or the second plated-through hole, ifappropriate, are/is electrically conductively connected to the firstcontact plane and/or to the second contact plane, respectively.Furthermore, the first plated-through hole and/or the secondplated-through hole, if appropriate, are/is electrically conductivelyconnected to the first contact location and/or to the second contactlocation, respectively.

By way of example, the plated-through hole extends from the bottomsurface of the moulded body completely through the moulded body.Particularly preferably, the plated-through hole extends from the bottomsurface of the moulded body completely through the moulded body andthrough the active layer of the semiconductor layer sequence. In thiscase, the plated-through hole is preferably formed by a singleelectrically conductive element, for example composed of a metal. Thecontact structure can be formed by the plated-through hole, the contactlocation and the contact plane. In accordance with one embodiment, theplated-through hole is in this case free of electronic components, suchas switches, transistors or the like.

It is possible, in particular, for only the at least one first and theat least one second contact location to be provided for electricallycontacting the arrangement. The arrangement then comprises exclusivelyelectrical contact locations which are arranged at the bottom surfaceand are freely accessible at the latter. The electrical connection ofthe at least one first and/or of the at least one second contactlocation to the first and/or second semiconductor regions, respectively,in particular the first and/or second contact plane, respectively, canbe effected in a wire-free fashion by means of the at least one firstand/or the at least one second plated-through hole, respectively. Thearrangement is in particular free of a wire contacting.

The use of plated-through holes for electrically connecting the contactlocations and the semiconductor regions makes it possible, inparticular, to provide a simply contactable arrangement without wirecontacts. The electrical contacting can be effected in particularexclusively at the bottom surface of the moulded body. As a result, anarrangement comprising pixels arranged in a matrixlike fashion, inparticular, can be realized in a simple manner. The optoelectronicarrangement can thus be a so-called flip-chip.

In accordance with at least one embodiment of the optoelectronicarrangement, the material of the first plated-through hole and/or of thesecond plated-through hole, if appropriate, is electrodeposited. Thefirst and/or the second plated-through hole can comprise in each case atleast one metal in particular copper, nickel, tin and/or gold. By way ofexample, the first and/or the second plated-through hole are/iselectrodeposited onto a part of the first contact plane and/or of thesecond contact plane.

It is furthermore possible for the at least one first plated-throughhole and/or the at least one second plated-through hole, if appropriate,to form a mechanically stabilizing component of the arrangement. By wayof example, the first plated-through hole and/or the secondplated-through hole together with the moulded body form the solemechanically stabilizing component of the arrangement.

In accordance with at least one embodiment of the optoelectronicarrangement, all of the first semiconductor regions, all of the secondsemiconductor regions and/or all of the active regions were producedfrom a common, in particular single, first semiconductor layer, acommon, in particular single, second semiconductor layer and/or acommon, in particular single, active layer respectively. In other words,the pixels are produced by structuring and at least partial removal of asemiconductor layer sequence comprising a first semiconductor layer, asecond semiconductor layer and an active layer.

In particular, it is possible that the pixels have been fitted jointly,that is to say in the wafer assemblage, at the top surface of themoulded body. By way of example, for this purpose, the semiconductorlayer sequence is structured after the fitting of the moulded body. As aresult, it is possible to provide an arrangement having a segmentedluminous surface in which adjacent pixels have a small lateral distance.The lateral distances between the pixels are then limited for exampleonly by the technique used for the segmentation. By way of example, thelateral distance between adjacent pixels with the use of a photographictechnique is at most 5 µm in approximately 99.7% of the cases (so-calledcalled 3-sigma range). Furthermore, it is possible to produce pixelshaving small extents in the lateral directions. In contrast to thesegmented pixels described above, the lateral distance in the case ofpixels that were fitted by means of individual positioning of thepreviously produced pixels at the top surface is at least 10 µm.

Furthermore, a method for producing an optoelectronic arrangement isspecified. The optoelectronic arrangement is preferably producible bythe method described here. That is to say that all features disclosedfor the arrangement are also disclosed for the method, and vice versa.

In accordance with at least one embodiment of the method, firstly asemiconductor layer sequence is provided on a growth substrate. Thesemiconductor layer sequence comprises a first semiconductor layer, asecond semiconductor layer and an active layer. The active layer can beprovided for emitting and/or absorbing electromagnetic radiation.

In accordance with at least one embodiment of the method, the separatingstructures and the pixels are produced. For this purpose, thesemiconductor layer sequence is removed in some locations using anetching process. In particular, trenches can be produced in thesemiconductor layer sequence, which trenches can form separatingstructures between the pixels. The structuring of the pixels can becarried out using a photographic technique, for example.

In accordance with at least one embodiment of the method, the mouldedbody is produced at a side of the semiconductor layer sequence facingaway from the growth substrate. In particular, it is possible for themoulded body to be produced at the side of the pixels facing away fromthe growth substrate. Here and hereinafter, “producing” the moulded bodymeans that the material of the moulded body is applied at thesemiconductor layer sequence. In particular, the material of the mouldedbody for producing the moulded body is present in liquid, granular,pasty and/or gaseous form.

In accordance with at least one embodiment of the method, the growthsubstrate is detached. The detaching can be carried out for exampleusing an etching process or by means of laser lift-off. Theoptoelectronic arrangement can thus be free of a growth substrate.

In accordance with at least one embodiment of the method, the lattercomprises the following steps:

-   providing a semiconductor layer sequence comprising a first    semiconductor layer, a second semiconductor layer and an active    layer, on a growth substrate,-   producing the separating structures and the pixels by removing the    semiconductor layer sequence in some locations using an etching    process,-   producing the moulded body at a side of the semiconductor layer    sequence facing away from the growth substrate, and-   detaching the growth substrate.

It is possible for the method steps to be carried out in the orderindicated.

In accordance with at least one embodiment of the method, applying themoulded body and detaching the growth substrate are carried out beforeproducing the separating structure and the pixels. In other words, thestructuring of the pixels is carried out after the moulded body has beenapplied. In particular, the etching process is carried out after themoulded body has been produced at the semiconductor layer sequence.

In accordance with at least one embodiment of the method, the mouldedbody is applied using a potting method. Here and hereinafter, by way ofexample, injection moulding methods, compression moulding methods ortransfer moulding methods are regarded as potting methods.

Alternatively or additionally, it is possible for the moulded body to beapplied by lamination as a film, to be applied as lacquer and/or to beapplied by means of chemical or physical vapour deposition.

The optoelectronic arrangement described here and the method forproducing an optoelectronic arrangement described here are explained ingreater detail below on the basis of exemplary embodiments and theassociated figures.

FIGS. 1A, 1B, and 1C show exemplary embodiments of optoelectronicarrangements described here on the basis of schematic plan views andsectional illustrations.

FIGS. 2A, 2B, 2C, and 2D show exemplary embodiments of optoelectronicarrangements described here on the basis of schematic plan views andsectional illustrations.

FIG. 3 shows exemplary embodiments of optoelectronic arrangementsdescribed here on the basis of schematic plan views and sectionalillustrations.

FIG. 4 shows exemplary embodiments of optoelectronic arrangementsdescribed here on the basis of schematic plan views and sectionalillustrations.

FIGS. 5A-5B show exemplary embodiments of optoelectronic arrangementsdescribed here on the basis of schematic plan views and sectionalillustrations.

FIGS. 6A-6B show exemplary embodiments of optoelectronic arrangementsdescribed here on the basis of schematic plan views and sectionalillustrations.

FIG. 7 shows exemplary embodiments of optoelectronic arrangementsdescribed here on the basis of schematic plan views and sectionalillustrations.

FIGS. 8A-8B show an exemplary embodiment of a method for producing anoptoelectronic arrangement described here on the basis of schematicsectional illustrations.

Elements that are identical, of identical type or act identically areprovided with the same reference signs in the figures. The figures andthe size relationships of the elements illustrated in the figures amongone another should not be regarded as to scale. Rather, individualelements may be illustrated with exaggerated size in order to enablebetter illustration and/or in order to afford a better understanding.

An exemplary embodiment of an optoelectronic arrangement described hereis explained in greater detail on the basis of the schematic sectionalillustration in FIG. 1A and the schematic plan views in FIGS. 1B and 1C.The section through the arrangement as illustrated in FIG. 1A is takenalong a first sectional line AB. FIG. 1B shows a plan view from above,while FIG. 1C shows a plan view from below. Here and hereinafter, a planview “from above” denotes a plan view of radiation passage surfaces 1 aof the pixels 1 of the optoelectronic arrangement, while a plan view“from below” denotes a plan view of a side of the arrangement facingaway from the radiation passage surfaces 1 a.

The optoelectronic arrangement comprises a moulded body 2 having a topsurface 2 a and a bottom surface 2 b facing away from the top surface 2a. The bottom surface 2 b is freely accessible. The moulded body 2serves for mechanically stabilizing the arrangement. The moulded body 2extends along two lateral directions x, y spanning a main extensionplane of the moulded body. The top surface 2 a and the bottom surface 2b each form a principal plane of the moulded body.

A multiplicity of pixels 1 are fitted at the top surface 2 a. The pixels1 are assigned to a first pixel group 41. Furthermore, a second pixelgroup 42 is assigned to each pixel 1. The optoelectronic arrangement ofthe exemplary embodiment shown in FIGS. 1A, 1B and 1C comprises – purelyby way of example – a single first pixel group 41, wherein all pixels 1of the arrangement in FIGS. 1A, 1B and 1C are assigned to the firstpixel group 41. Each of the second pixel groups 42 is then assigned asingle pixel 1.

Each pixel 1 comprises a first semiconductor region 11, an active region10 and a second semiconductor region 12. The first semiconductor region11 can be formed with an n-conducting semiconductor material, forexample. The second semiconductor region 12 can be formed with ap-conducting semiconductor material.

Furthermore, each pixel 1 has the radiation passage surface 1 a facingaway from the moulded body 2. The second semiconductor region 12 isroughened at the radiation passage surface 1 a. The roughenings serve ascoupling-out and/or coupling-in structures used to improve thetransmission of the electromagnetic radiation through the radiationpassage surface 1 a.

Separating structures 3 are situated between two adjacent pixels 1. Sidesurfaces 1 b of the pixels 1 directly adjoin the separating structures3. In the exemplary embodiment illustrated in FIGS. 1A, 1B and 1C, theseparating structures 3 are embodied as trenches, wherein the firstsemiconductor regions 11, the active regions 10 and the secondsemiconductor regions 12 are completely separated by the trenches.

The optoelectronic arrangement comprises a first contact structure 51,52, 53, which is assigned one-to-one to the first pixel group 41.Furthermore, the arrangement comprises a multiplicity of second contactstructures 61, 62, 63, wherein a second contact structure 61, 62, 63 isassigned one-to-one to each of the second pixel groups 42 of thearrangement.

The first contact structure 51, 52, 53 comprises a first contact plane51, a second contact location 52 and at least one first plated-throughhole 53. The first contact plane 51 is embodied in a continuous fashion.In particular, an outer surface of the first contact plane 51 isembodied in a multiply connected fashion in a plan view from thevertical direction z. The first contact plane 51 is freely accessiblewithin the trenches of the separating structures 3. Alternatively, it ispossible for a dielectric to be applied to the first contact plane 51within the trenches of the separating structures 3. In this case, thefirst contact plane 51 is not freely accessible in the region of thetrenches of the separating structures 3. The first contact plane 51 canbe electrically conductively connected to the first semiconductorregions 11 of the pixels 1, and in particular can be in direct contacttherewith. By way of example, the first semiconductor regions 11 of thepixels 1 can be at a common electrical potential.

The first contact plane 51 can be embodied in a radiation-reflectingfashion. The first contact plane 51 can be formed with a metal, such assilver or aluminium, for example, or consist of a metal.

The first contact plane 51 is electrically conductively connected to thefirst contact location 52 by means of the first plated-through hole 53.By way of example, the first plated-through hole 53 is formed with thesame material as the first contact plane 51. The first plated-throughhole 53 can be applied to the first contact plane 51 electrolytically.By way of example, the first plated-through hole 51 may have beenelectrodeposited in a production method in a method step carried outbefore the production of the moulded body 2. In particular, the firstplated-through hole 53 can extend completely through the moulded body 2in the vertical direction z.

The first contact location 52 is freely accessible and in particularelectrically contactable at the bottom surface 2 b (cf. FIGS. 1A and1C). The first contact location 52 can be formed with at least oneelectrically conductive material, such as, for example aluminium,silver, palladium, gold, platinum, titanium, tin, copper or nickel, orconsist of at least one of these materials.

An insulation layer 71 formed with an electrically insulating material,such as silicon nitride or oxide, for example, is fitted between themoulded body 2 and the first contact plane 51 and between the mouldedbody 2 and the pixels 1. The insulation layer 71 can serve forelectrical insulation between the material of the pixels 1, such that anelectrical connection is produced only by means of the first contactstructure 51, 52 and 53 and the second contact structure 61, 62, 63. Inparticular, the insulation layer 71 can completely cover the top surface2 a of the moulded body 2 and be in direct contact with the top surface2 a. Furthermore, it is possible for locations of an outer surface ofthe first semiconductor region 11 facing the moulded body 2 which arenot covered by the first contact plane 51 to be covered by theinsulation layer 71 and be in direct contact therewith.

The second contact structure 61, 62, 63 comprises a second contact plane61, a second contact location 62 and a second plated-through hole 63.The second plated-through hole 63 extends in the vertical direction zcompletely through the moulded body 2. The second plated-through hole 63is additionally electrically conductively connected to the secondcontact location 62. The second contact location 62 is freely accessibleand in particular electrically contactable at the bottom surface 2 b(cf. FIGS. 1A and 1C).

In the present case, the second contact plane 61 is likewise embodied asan electrical plated-through hole, wherein the second contact plane 61proceeding from the second plated-through hole 63 extends through theinsulation layer 71, the first semiconductor region 11 and the activeregion 10 into the second semiconductor region 12 of the pixel 1assigned to the second plated-through hole 63, The second contact plane62 and the second plated-through hole 63 can be embodied integrally withone another. The second contact plane 61 can be electrically insulatedfrom the first semiconductor region 11 and the active region 10 by meansof a further insulating material (not shown in the figures).

The first contact plane 51 surrounds the second plated-through holes 63in each case in a framelike fashion. In other words, in a plan view, thesecond plated-through holes 63 are enclosed by the first contact plane51 in the lateral directions x, y at least in some locations, preferablycompletely. Furthermore, the first plated-through hole 53 is arrangedlaterally at a distance from one of the second plated-through holes 63.

The moulded body 2 completely surrounds the first plated-through hole 53and the second plated-through holes 63 in lateral directions x, y. Inparticular, the first and second plated-through holes 53, 63 arelaterally embedded by the moulded body 2.

Further exemplary embodiments of an optoelectronic arrangement describedhere are explained in greater detail on the basis of the schematic planviews in FIGS. 2A, 2B, 2C and 2D. A plan view from above is shown ineach case. The exemplary embodiments illustrated may have along thefirst sectional line AB for example the construction discussed inassociation with FIG. 1A.

The optoelectronic arrangements illustrated in FIGS. 2A, 2B, 2C and 2Din each case comprise a multiplicity of pixels 1 which are assigned ineach case to at least one first pixel group 41 and at least one secondpixel group 42. The pixels 1 are arranged alongside one another in thelateral directions x, y. In this case, the construction of the exemplaryembodiments of the optoelectronic arrangement in FIGS. 2A, 2B, 2C and 2Ddiffers as follows.

In the exemplary embodiment in FIG. 2A, the pixels 1 have the same sizeand in particular the same extents in the lateral directions x, y. Thepixels 1 are arranged in a matrixlike fashion in rows 43 and columns 44.The first contact location 51 extends across a plurality of pixels 1 ofa column 44. It is alternatively possible for the arrangement tocomprise a plurality of first contact locations 51. In this case, thepixels 1 can be assigned to a plurality of first pixel groups 41,wherein a first contact location 51 is assigned one-to-one to each firstpixel group 41.

The pixels 1 of the exemplary embodiment in FIG. 2B are likewisearranged in a matrixlike fashion, wherein the pixels 1 of different rows43 of the matrix have different extents in one of the lateral directionsx, y.

In the exemplary embodiment in FIG. 2C, the pixels 1 are arranged inrows, wherein the number of pixels 1 from at least two rows 43 differsand the pixels 1 of different rows 43 have different extents in thelateral directions x, y.

The pixels 1 of the exemplary embodiment in FIG. 2D have differentshapes and different extents in the lateral directions x, y. At leastone of the pixels 1 can be embodied in an elliptical fashion, inparticular in a circular fashion, in a plan view. The pixels 1 adjoiningthe elliptical pixels 1 have at least one curved side surface 1 b.

A further exemplary embodiment of an optoelectronic arrangementdescribed here is explained in greater detail on the basis of theschematic plan view from above shown in FIG. 3 . The arrangementcomprises a multiplicity of pixels 1 which are arranged in a matrixlikefashion in rows 43 and columns 44. Purely by way of example, all pixels1 are assigned to a single first pixel group 41. The dashed linesbetween the pixels indicate that the number of rows 43 and columns 44and in particular the number of pixels 1 can be scaled arbitrarily. Inparticular, the number of rows 43 and columns 44 can be adapted to therespective technical requirement. All the pixels 1 are applied on thecommon moulded body 2. The moulded body 2 can project beyond the pixels1 in the lateral directions x, y.

A further exemplary embodiment of an optoelectronic arrangementdescribed here is explained in greater detail on the basis of theschematic plan view from above shown in FIG. 4 . The pixels 1 of thearrangement are once again arranged in a matrixlike fashion in rows 43and columns 44. In contrast to the exemplary embodiment shown in FIG. 3, the pixels 1 are assigned to a respective row 43 of a first pixelgroup 41 and the pixels are assigned to a respective column 44 of asecond pixel group. A first pixel group 41 and a second pixel group 42are assigned to each pixel 1.

The electrical contacting of the pixels 1 of the first pixel group 41 iseffected in each case by means of a first contact structure 51, 52, 53having in each case a first contact plane 51 and a contact location 52.Furthermore, the electrical contacting of the pixels 1 of the secondpixel group 42 is effected in each case by means of a second contactstructure 61, 62, 63 having in each case a second contact plane 61 and asecond contact location 62. The second semiconductor regions 12 of thepixels 1 of a respective one of the second pixel groups 42 areelectrically conductively connected to one another by means of thesecond contact plane 62 assigned to the second pixel group 42.

Such a division into first pixel groups 41 assigned to a respective row43 and second pixel groups 42 assigned to a respective column 44 makesit possible for the pixels 1 to be electrically driven in each caseindividually by means of a small number of first and second contactlocations 52, 62, respectively.

Further exemplary embodiments of an optoelectronic arrangement describedhere are explained in greater detail on the basis of the sectionalillustrations in FIGS. 5A, 5B, 6A, 6B and 7 . The illustrated sectionsthrough the arrangement are taken along a second sectional line CDillustrated in FIG. 4 , or along a third sectional line C‘D'.

An electrical contacting of the pixels 1 of one exemplary embodiment ofthe arrangement described here is explained in greater detail on thebasis of the sectional illustration in FIG. 5A running along the thirdsectional line CD. The separating structures 3 between the pixels 1 areembodied as in the exemplary embodiment shown in FIG. 1A. A secondcontact structure 61, 62, 63 having a second contact location 62, asecond contact plane 61 and at least one second plated-through hole 63is assigned one-to-one to each second pixel group 42.

The second semiconductor regions 12 of the pixels 1 of the respectivesecond pixel group 42 are electrically conductively connected to oneanother by means of the second contact plane 61. In the case of aplurality of pixels 1 per second pixel group 42, the second contactplane 61 can comprise the electrical plated-through hole through thepixels 1 as explained in association with FIG. 1A and can comprise, inaddition, an electrically conductive layer embodied in an integralfashion and formed with a metal, for example. The second contact plane61 can be embodied in a radiation-reflecting fashion at least in somelocations. The first semiconductor regions 11 of the pixels 1 canfurthermore be electrically conductively connected in each case tofurther pixels 1 of the first pixel group 41 by means of a plurality offirst contact planes 51.

An electrical contacting of the pixels 1 of an exemplary embodiment ofthe arrangement described here is explained in greater detail on thebasis of the sectional illustration in FIG. 5B running along the thirdsectional line C'D'. The second semiconductor regions 12 areelectrically contacted and connected by means of the second contactstructure 61, 62, 63. The construction of the second contact structure61, 62, 63 corresponds to that in FIG. 5A. The first semiconductorregions 11 are electrically contactable by means of first contactstructures 51, 52, 53, wherein a first contact structure 51, 52, 53 isassigned one-to-one to each first pixel group 41. The firstplated-through holes 53 of the first contact structures 51, 52, 53 arein each case arranged laterally at a distance from the secondplated-through holes 63 of the second contact structure 61, 62, 63.

A further exemplary embodiment of the arrangement described here isexplained in greater detail on the basis of the sectional illustrationin FIG. 6A taken along the second sectional line CD and the sectionalillustration in FIG. 6B taken along the third sectional line C'D'. Incontrast to the exemplary embodiments described in association withFIGS. 1A, 5A and 5B, only the first semiconductor regions 11 and theactive regions 12 of adjacent pixels 1 are completely separated from oneanother by the separating structures 3 embodied as trenches. The secondsemiconductor regions 12 are connected to one another via intermediateregions 31. The moulded body 2 extends into the separating structures 3embodied as trenches. The separating structures 3 are thus formed by themoulded body 2. Furthermore, the insulation layer 71 is arranged partlyin the trenches of the separating structures 3. Such an embodiment ofthe separating structures 3 is possible for all exemplary embodiments ofthe optoelectronic arrangement described here.

A further exemplary embodiment of the arrangement described here isexplained in greater detail on the basis of the sectional illustrationin FIG. 7 taken along the second sectional line CD. The exemplaryembodiment shown substantially corresponds to that in FIG. 6A, whereinthe separating structures 3 are now formed by a degenerate semiconductormaterial 32. By way of example, for this purpose, regions of the firstsemiconductor layer 111 are backsputtered in a production method. Thebacksputtering can be carried out for example by means of a treatment ofthe first semiconductor layer with a plasma, such as, for example, anargon plasma, a hydrogen plasma and/or an oxygen plasma. The treatmentresults in an at least partial destruction of the conductivity of thematerial of the first semiconductor layer 111 and thus a redoping toform the degenerate semiconductor material 32. The degeneratesemiconductor material 32 is embodied in particular in a non-conductingfashion.

Exemplary embodiments of a method for producing an optoelectronicarrangement described here are explained in greater detail on the basisof the schematic sectional illustrations in FIGS. 8A and 8B. In thefirst method step in FIG. 8A, a semiconductor layer sequence 111, 101,121, comprising a first semiconductor layer 111, an active layer 101 anda second semiconductor layer 121, is provided on a growth substrate 8.The moulded body 2 has already been produced at a side of thesemiconductor layer sequence 111, 101, 121 facing away from the growthsubstrate 8. Before the production of the moulded body 2, a firstcontact structure 51, 52, 53 and a second contact structure 61, 62, 63can be deposited onto the semiconductor layer sequence 111, 101, 121 forexample by electrodeposition.

In the method step illustrated in FIG. 8B, the growth substrate 8 isdetached. Separating structures 3 have been introduced into thesemiconductor layer sequence 111, 101, 121 by means of etching. Inparticular, introducing separating structures 3 can be carried out afterapplying the moulded body 2.

As an alternative to the method shown in FIGS. 8A and 8B, producing themoulded body 2 can also be carried out after structuring the pixels 1.The growth substrate 8 is then detached after the pixels 1 have beenproduced.

The present application claims the priority of the German application DE102015111574.3 the disclosure content of which is hereby incorporated byreference.

The invention is not restricted to the exemplary embodiments by thedescription on the basis of said exemplary embodiments. Rather, theinvention encompasses any novel feature and also any combination offeatures, which in particular includes any combination of features inthe patent claims, even if this feature or this combination itself isnot explicitly specified in the patent claims or exemplary embodiments.

We claim:
 1. A method for producing an optoelectronic arrangement,comprising the following steps: providing a semiconductor layer sequencecomprising a first semiconductor layer, a second semiconductor layer andan active layer on a growth substrate, producing separating structuresand pixels by removing the semiconductor layer sequence in somelocations using an etching process such that the pixels are spatiallyseparated in pixels of a first pixel group and pixel of a second pixelgroup, producing an electrical insulating body at a side of thesemiconductor layer sequence facing away from the growth substrate, anddetaching the growth substrate.
 2. The method according to claim 1,wherein applying the electrical insulating body and detaching the growthsubstrate are carried out before producing the separating structure andthe pixels.
 3. The method according to claim 1, wherein the electricalinsulating body is applied by a potting method.
 4. The method accordingto claim 1, wherein the electrical insulating body is produced at a sideof the semiconductor layer sequence facing away from the growthsubstrate.
 5. The method according to claim 1, wherein trenches areproduced in the semiconductor layer sequence, which trenches form theseparating structures between the pixels.
 6. The method according toclaim 1,wherein the pixels of the first pixel group are arrangedalongside one another at a top surface of the optoelectronicarrangement, and the first semiconductor regions and/or the secondsemiconductor regions of adjacent pixels of the first pixel group arespatially separated from one another by the separating structures. 7.The method according to claim 1, wherein before the production of theelectrical insulating body, a first contact structure and a secondcontact structure are deposited onto the semiconductor layer sequence.8. The method according to claim 7, wherein the first contact structurehas a first contact plane, a first plated-through hole extending throughthe electrical insulating body and a first contact location, which isfreely accessible at a bottom surface of the electrical insulating bodyfacing away from a top surface.
 9. The method according to claim 8,wherein the first contact plane is directly connected to the firstplated-through hole.
 10. The method according to claim 8, wherein thefirst semiconductor regions of the pixels of the first pixel group areelectrically conductively connected to one another exclusively by thefirst contact plane and are electrically contactable by the firstcontact location.
 11. The method according to claim 1, wherein the firstsemiconductor regions and the active regions of adjacent pixels arespatially completely separated from one another by the separatingstructures, and the second semiconductor regions of adjacent pixels areconnected to one another via intermediate regions formed with thematerial of the second semiconductor regions.
 12. The method accordingto claim 1, wherein each pixel is individually drivable.
 13. The methodaccording to claim 1, wherein the electrical insulating body is amechanically stabilizing component of the arrangement.